mmdt3904 dual surface mount npn transistors 1 2 3 4 5 6 1 2 3 4 5 6 features applications maximum ratings rating symbol value units this device contains two electrically-isolated 2n3904 npn transistors. the two transistors have well matched hfe and are encapsulated in an ultra- small sot-363 (sc70-6l) package. this device is ideal for portable applications where board space is at a premium. electrically isolated dual npn switching transistor general purpose amplifier applications hand-held computers, pdas collector-base voltage collector-emitter voltage emitter-base voltage voltage collector current total power dissipation (note 1) operating junction temperature range storage temperature range 9/20/2005 page 1 www.panjit.com 60 v v 40 v 6.0 ma 200 200 mw c -55 to +150 c -55 to +150 v v v i p t t cbo ceo eb c d stg t = 25c unless otherwise noted j j note 1. fr-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout sot- 363 thermal characteristics characteristic symbol units thja thermal resistance, junction to ambient (note 1) 625 value r c/w lead-free plating (100% matte tin finish) device marking code: s1a 2 654 13 2 654 13
v = 3.0v, i = 10ma v (off) = -0.5v, i = -1.0m a - i = 10ua www.panjit.com 9/20/2005 page 2 electrical characteristics (each transistor) t = 25c unless otherwise noted j c parameter symbol min units collector-emitter breakdown voltag e conditions typ max v (br)ceo 40 - - v c 60 - - v note 2. short duration test pulse used to minimize self-heating (br)cbo v collector-base breakdown voltag e i = 1.0ma i = 10ua e emitter-base breakdown voltage (br)ebo v v = 30v, v = 3.0v eb ce i cex collector cutoff current 6.0 - - v - - 50 na base cutoff current i bl dc current gain (note 2) h fe - - 50 na - - 0.2 v - - 0.3 v 40 - - collector-emitter saturation voltage (note 2) ce(sat) v i = 10ma, i = 1.0ma cb i = 50ma, i = 5.0ma cb base-emitter saturation voltage (note 2) be(sat) v 0.65 - 0.85 v - - 0.95 gain-bandwidth product t f 300 - - mhz collector-base capacitance cbo c - - 4.0 pf cb v = 5.0v, f =1.0mhz v = 20v, i = 10ma f = 100mhz emitter-base capacitance ebo c - - 8.0 pf eb v = 0.5v, f =1.0mhz mmdt3904 70 - - 100 - 300 - 60 - - 30 - - i = 0.1ma, v = 1.0v ce c delay time d t--35ns cc rise time r t--35ns storage time s t - - 200 ns fall time f t - 50 ns v = 30v, v = 3.0v eb ce i = 1.0ma, v = 1.0v ce c i = 10ma, v = 1.0v ce c i = 50ma, v = 1.0v ce c i = 100ma, v = 1.0v ce c i = 10ma, i = 1.0ma cb i = 50ma, i = 5.0ma cb c ce be c b1 v = 3.0v, i = 10ma i = i = 1.0m a cc c b2 b1 switching time equivalent test circuits 275 ? 10k ? c s * < 4pf 0 -0.5v 300ns duty cycle ~ 2.0% +10.9v < 1ns +3v delay and rise time equivalent test circuit storage and fall time equivalent test circuit c s * < 4pf 275 ? 10k ? 1n916 +3v 0 -9.1v 10 to 500us duty cycle ~ 2.0% +10.9v < 1ns 275 ? 10k ? c s * < 4pf 0 -0.5v 300ns duty cycle ~ 2.0% +10.9v < 1ns +3v delay and rise time equivalent test circuit 275 ? 10k ? c s * < 4pf 0 -0.5v 300ns duty cycle ~ 2.0% +10.9v < 1ns +3v delay and rise time equivalent test circuit storage and fall time equivalent test circuit c s * < 4pf 275 ? 10k ? 1n916 +3v 0 -9.1v 10 to 500us duty cycle ~ 2.0% +10.9v < 1ns storage and fall time equivalent test circuit c s * < 4pf 275 ? 10k ? 1n916 +3v 0 -9.1v 10 to 500us duty cycle ~ 2.0% +10.9v < 1ns c s * < 4pf 275 ? 10k ? 1n916 +3v 0 -9.1v 10 to 500us duty cycle ~ 2.0% +10.9v < 1ns
mmdt3904 characteristics curves (each transistor) j t = 25c unless otherwise noted www.panjit.com 9/20/2005 page 3 0 50 100 150 200 250 300 0.01 0.1 1 10 100 1000 collector cur rent, i c (ma) hf e t j = 25 c t j = 100 c t j = 150 c v ce = 1v 0.000 0.200 0.400 0.600 0.800 1.000 1.200 1.400 0.01 0.1 1 10 100 1000 colle ctor cur r ent, i c (ma) v be (v) t j = 25 c t j = 100 c t j = 150 v c e = 1v fig. 2. vbe vs. ic fig. 1. hfe vs. ic 0.010 0.100 1.000 0.01 0.1 1 10 100 1000 collector current, i c (ma) v ce (sat) (v ) t j = 25 c t j = 150 c i c /i b = 10 fig. 3. vce(sat) vs. ic 0.1 1.0 0.01 0.1 1 10 100 collector cur rent, i c (ma) v be (sat) (v) t j = 25 c t j = 150 c i c /i b = 10 t j = 100 c fig. 4. vbe(sat) vs. ic 1 10 0.1 1 10 100 reverse voltage, v r (v) capacitance (pf) c ob ( cb ) c ib (eb) t j = 25 c fig. 5. capacitances
www.panjit.com 9/20/2005 page 4 ordering information mmdt3904 t/r7 - 3,000 units per 7 inch reel mmdt3904 t/r13 -10,000 units per 13 inch reel copyright panjit international, inc 2005 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. package layout and suggested pad dimensions mmdt3904
|
